Transport properties of copper indium aluminum selenide thin films deposited by successive Ionic layer adsorption and reaction
Identifieur interne : 000288 ( Main/Repository ); précédent : 000287; suivant : 000289Transport properties of copper indium aluminum selenide thin films deposited by successive Ionic layer adsorption and reaction
Auteurs : RBID : Pascal:13-0151316Descripteurs français
- Pascal (Inist)
- Phénomène transport, Propriété transport, Adsorption, Microstructure, Morphologie, Effet Hall, Diffraction RX, Polycristal, Microscopie électronique balayage, Analyse RX dispersion énergie, Caractéristique optique, Propriété optique, Coefficient absorption, Facteur transmission, Rayonnement IR proche, Transition optique, Bande interdite, Haute température, Excitation thermique, Porteur charge, Joint grain, Séléniure de cuivre, Séléniure d'indium, Aluminium, Couche mince, Cuivre, Verre, Structure chalcopyrite, Matériau granulaire, 6843, 8105K, 6865, 0779, 7867, Méthode SILAR.
- Wicri :
English descriptors
- KwdEn :
- Absorption coefficients, Adsorption, Aluminium, Chalcopyrite structure, Charge carriers, Copper, Copper selenides, Energy gap, Energy-dispersive X-ray analysis, Glass, Grain boundaries, Granular materials, Hall effect, High temperature, Indium selenides, Microstructure, Morphology, Near infrared radiation, Optical characteristic, Optical properties, Optical transition, Polycrystals, SILAR method, Scanning electron microscopy, Thermal excitation, Thin films, Transmittance, Transport processes, Transport properties, XRD.
Abstract
Cu(InAl)Se2 (CIAS) thin films have been prepared by successive ionic layer adsorption and reaction (SILAR) technique on well-cleaned glass substrates. The structure, composition, morphology, optical, electrical, and Hall effect studies of prepared thin films have been studied. X-ray diffraction studies confirmed the polycrystalline nature of the thin films with a chalcopyrite structure. Scanning electron microscopy studies revealed that the morphology of the prepared films was smooth, dense, uniform, and granular. Composition of various constituents such as Cu, In, Al, and Se in the CIAS films has been determined from energy dispersive x-ray analysis. Optical properties have been studied in detail from the transmittance spectra in the visible and near infrared region and the optical transition has been found to be direct and allowed with the band gap of around 1.16-1.50 eV. Electrical analysis helps to identify that in high temperature region the conductivity is attributed due to thermal excitation of the charge carriers from grain boundaries to the neutral region of the grains. Transport properties of CIAS thin films have been studied in the temperature range 298-398 K and the transport parameters are evaluated and reported in this paper in detail.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transport properties of copper indium aluminum selenide thin films deposited by successive Ionic layer adsorption and reaction</title><author><name sortKey="Kavitha, B" uniqKey="Kavitha B">B. Kavitha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Kongunadu Arts and Science College</s1><s2>Coimbatore</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Coimbatore</wicri:noRegion></affiliation></author><author><name sortKey="Dhanam, M" uniqKey="Dhanam M">M. Dhanam</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Kongunadu Arts and Science College</s1><s2>Coimbatore</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Coimbatore</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0151316</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0151316 INIST</idno><idno type="RBID">Pascal:13-0151316</idno><idno type="wicri:Area/Main/Corpus">000F57</idno><idno type="wicri:Area/Main/Repository">000288</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Adsorption</term><term>Aluminium</term><term>Chalcopyrite structure</term><term>Charge carriers</term><term>Copper</term><term>Copper selenides</term><term>Energy gap</term><term>Energy-dispersive X-ray analysis</term><term>Glass</term><term>Grain boundaries</term><term>Granular materials</term><term>Hall effect</term><term>High temperature</term><term>Indium selenides</term><term>Microstructure</term><term>Morphology</term><term>Near infrared radiation</term><term>Optical characteristic</term><term>Optical properties</term><term>Optical transition</term><term>Polycrystals</term><term>SILAR method</term><term>Scanning electron microscopy</term><term>Thermal excitation</term><term>Thin films</term><term>Transmittance</term><term>Transport processes</term><term>Transport properties</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Phénomène transport</term><term>Propriété transport</term><term>Adsorption</term><term>Microstructure</term><term>Morphologie</term><term>Effet Hall</term><term>Diffraction RX</term><term>Polycristal</term><term>Microscopie électronique balayage</term><term>Analyse RX dispersion énergie</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Coefficient absorption</term><term>Facteur transmission</term><term>Rayonnement IR proche</term><term>Transition optique</term><term>Bande interdite</term><term>Haute température</term><term>Excitation thermique</term><term>Porteur charge</term><term>Joint grain</term><term>Séléniure de cuivre</term><term>Séléniure d'indium</term><term>Aluminium</term><term>Couche mince</term><term>Cuivre</term><term>Verre</term><term>Structure chalcopyrite</term><term>Matériau granulaire</term><term>6843</term><term>8105K</term><term>6865</term><term>0779</term><term>7867</term><term>Méthode SILAR</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term><term>Cuivre</term><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Cu(InAl)Se<sub>2</sub> (CIAS) thin films have been prepared by successive ionic layer adsorption and reaction (SILAR) technique on well-cleaned glass substrates. The structure, composition, morphology, optical, electrical, and Hall effect studies of prepared thin films have been studied. X-ray diffraction studies confirmed the polycrystalline nature of the thin films with a chalcopyrite structure. Scanning electron microscopy studies revealed that the morphology of the prepared films was smooth, dense, uniform, and granular. Composition of various constituents such as Cu, In, Al, and Se in the CIAS films has been determined from energy dispersive x-ray analysis. Optical properties have been studied in detail from the transmittance spectra in the visible and near infrared region and the optical transition has been found to be direct and allowed with the band gap of around 1.16-1.50 eV. Electrical analysis helps to identify that in high temperature region the conductivity is attributed due to thermal excitation of the charge carriers from grain boundaries to the neutral region of the grains. Transport properties of CIAS thin films have been studied in the temperature range 298-398 K and the transport parameters are evaluated and reported in this paper in detail.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Transport properties of copper indium aluminum selenide thin films deposited by successive Ionic layer adsorption and reaction</s1></fA08><fA11 i1="01" i2="1"><s1>KAVITHA (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>DHANAM (M.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kongunadu Arts and Science College</s1><s2>Coimbatore</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>495-503</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000502473530420</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>50 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0151316</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Cu(InAl)Se<sub>2</sub> (CIAS) thin films have been prepared by successive ionic layer adsorption and reaction (SILAR) technique on well-cleaned glass substrates. The structure, composition, morphology, optical, electrical, and Hall effect studies of prepared thin films have been studied. X-ray diffraction studies confirmed the polycrystalline nature of the thin films with a chalcopyrite structure. Scanning electron microscopy studies revealed that the morphology of the prepared films was smooth, dense, uniform, and granular. Composition of various constituents such as Cu, In, Al, and Se in the CIAS films has been determined from energy dispersive x-ray analysis. Optical properties have been studied in detail from the transmittance spectra in the visible and near infrared region and the optical transition has been found to be direct and allowed with the band gap of around 1.16-1.50 eV. Electrical analysis helps to identify that in high temperature region the conductivity is attributed due to thermal excitation of the charge carriers from grain boundaries to the neutral region of the grains. Transport properties of CIAS thin films have been studied in the temperature range 298-398 K and the transport parameters are evaluated and reported in this paper in detail.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H35</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05K</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Phénomène transport</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Transport processes</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Propriété transport</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Transport properties</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Propiedad transporte</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Adsorption</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Adsorption</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Microstructure</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Microstructure</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Morphologie</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Morphology</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet Hall</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Hall effect</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Polycristal</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Polycrystals</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Analyse RX dispersion énergie</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Energy-dispersive X-ray analysis</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Análisis RX dispersión energía</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique optique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Optical characteristic</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Característica óptica</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Propriété optique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Optical properties</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Transmittance</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Rayonnement IR proche</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Near infrared radiation</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Transition optique</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Optical transition</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Transición óptica</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Bande interdite</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Energy gap</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Haute température</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>High temperature</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Alta temperatura</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Excitation thermique</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Thermal excitation</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Excitación térmica</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Porteur charge</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Charge carriers</s0><s5>20</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Joint grain</s0><s5>21</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Grain boundaries</s0><s5>21</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>22</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Aluminium</s0><s2>NC</s2><s5>24</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Aluminium</s0><s2>NC</s2><s5>24</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Couche mince</s0><s5>25</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Thin films</s0><s5>25</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Verre</s0><s5>27</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Glass</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Structure 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